The IRFPE50 is a power MOSFET with the following key specifications:

• Type: N-channel MOSFET
• Maximum Drain-Source Voltage (Vds): 500V
• Maximum Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): 4.0A
• Pulsed Drain Current (Id,pulse): 12A
• Maximum Power Dissipation (Pd): 50W
• Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V
• Maximum Drain-Source On-Resistance (Rds(on)): 0.75Ω (at Vgs = 10V)
• Package Type: TO-3P

The IRFPE50 is suitable for high-voltage power switching applications and is commonly used in power supplies, motor control circuits, and other high-voltage electronic devices. Its high voltage rating and moderate current handling make it ideal for switching applications in industrial and consumer electronics.