IRFP250 N-channel MOSFET (Pack of 2)

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3 in stock


The IRFP250 is a high-power N-channel MOSFET with the following key specifications:

  • Type: N-channel MOSFET
  • Maximum Drain-Source Voltage (Vds): 250V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): 14A
  • Pulsed Drain Current (Id,pulse): 60A
  • Maximum Power Dissipation (Pd): 94W
  • Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V
  • Maximum Drain-Source On-Resistance (Rds(on)): 0.14Ω (at Vgs = 10V)
  • Package Type: TO-247

The IRFP250 is designed for high-power switching and amplification applications. Its high voltage and current ratings, combined with a low Rds(on), make it suitable for use in power supplies, motor drivers, and other high-current, high-voltage circuits.

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3 in stock

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IRFP250 N-channel MOSFET

High-Performance MOSFET for Power Applications

The IRFP250 N-channel MOSFET is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed to handle high power and voltage levels efficiently. Known for its robust construction and reliable performance, the IRFP250 is widely used in various power electronics applications, including switching circuits, power amplifiers, and motor control systems. Its ability to manage significant current and voltage makes it a versatile choice for demanding electronic projects.

Key Features

  • High Voltage Rating: The IRFP250 N-channel MOSFET supports a maximum drain-source voltage (VDS) of 250V, making it suitable for use in high-voltage applications. This high voltage capability ensures reliable operation in circuits where substantial voltage levels are present, such as power supplies and amplifiers.
  • High Current Handling: With a maximum continuous drain current (ID) of up to 14A, the IRFP250 can handle significant current loads. This feature is crucial for applications requiring substantial power delivery, including motor drivers and power conversion circuits.
  • Low On-Resistance: The MOSFET features a low on-resistance (RDS(on)) typically around 0.08 ohms at a gate-source voltage (VGS) of 10V. This low resistance reduces conduction losses and improves overall efficiency in power circuits by minimizing energy dissipation during operation.
  • Fast Switching Speed: The IRFP250 N-channel MOSFET offers fast switching capabilities, which enhance its performance in high-frequency and switching applications. The quick response time helps in reducing switching losses and improving the efficiency of switching power supplies and other electronic circuits.

Applications

The IRFP250 is versatile and can be used in a variety of power applications:

  • Power Amplifiers: The MOSFET is commonly used in power amplifier circuits, where its high voltage and current capabilities allow it to amplify signals effectively. It is suitable for audio, RF, and other power amplification applications where robust performance is required.
  • Motor Control: In motor control systems, the IRFP250 can handle high currents and voltages, making it ideal for driving motors and other inductive loads. Its low on-resistance and fast switching speed contribute to efficient motor operation and control.
  • Switching Power Supplies: The MOSFET is well-suited for use in switching power supplies, where it helps in converting and regulating power efficiently. Its high voltage rating and low conduction losses improve the overall efficiency of power conversion circuits.
  • High-Power Switching: The IRFP250 can be employed in high-power switching applications, where it controls large loads or high-voltage circuits. Its robust design ensures reliable operation in demanding environments, such as industrial equipment and high-power electronics.

Easy Integration

The IRFP250 is housed in a standard TO-247 package with three terminals—drain, gate, and source—making it easy to integrate into various electronic circuits. Its design allows for straightforward mounting on a heat sink to manage thermal performance and ensure reliable operation under high power conditions.

Conclusion

The IRFP250 is a high-performance N-channel MOSFET that delivers exceptional performance in high-power and high-voltage applications. Its high voltage rating, substantial current handling, low on-resistance, and fast switching capabilities make it an excellent choice for power amplifiers, motor control systems, switching power supplies, and high-power switching applications. With the IRFP250, designers can achieve efficient and reliable performance in their power electronics projects.

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