2N7000: N-Channel Enhancement-Mode Field-Effect Transistor (MOSFET) (Pack of 5)

Availability:

30 in stock


The 2N7000 is a popular N-channel MOSFET with the following features:

  • Type: N-Channel MOSFET
  • Maximum Drain-Source Voltage (Vds): 60V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Maximum Drain Current (Id): 200mA
  • Gate Threshold Voltage (Vgs(th)): 2-4V
  • Rds(on) (On-Resistance): 5Ω (typical)
  • Package Types: TO-92, SOT-23

The 2N7000 is commonly used for switching and amplification applications in low-power circuits. Its small size and low on-resistance make it suitable for use in a variety of electronic devices.

63.72 70.80 (Inc. GST)

30 in stock

BUY MORE, PAY LESS! Add to your cart now and enjoy an extra 10% discount. Wholesale pricing also available—contact us for B2B bulk deals and special discounts on pre-orders!

Quantity (Order Big, Save Big!)*Your DiscountPrice after discount (Inc. GST)
2 - 910 % OFF57.35
10 - 5020 % OFF50.98
51 - 10030 % OFF44.60

Your Price:

Total Price:

2N7000: N-Channel Enhancement-Mode Field-Effect Transistor (MOSFET)

Overview The 2N7000: N-Channel Enhancement-Mode Field-Effect Transistor is an N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in low-power switching applications. Known for its efficiency, the 2N7000 is designed to handle medium voltages and currents, making it an ideal choice for hobbyists and engineers working on various electronic projects.

Key Features

  • N-Channel MOSFET: The 2N7000 operates as an N-channel transistor, meaning it uses negative charge carriers (electrons) for conduction, offering fast switching and efficient performance.
  • Enhancement Mode: This MOSFET requires a positive gate-to-source voltage to conduct, which provides better control and reduces power consumption when the transistor is off.
  • Low On-Resistance: With a low Rds(on) value, the 2N7000 minimizes power loss during operation, making it ideal for energy-efficient applications.
  • Drain-Source Voltage (Vds): The 2N7000 can handle up to 60V across the drain and source terminals, making it suitable for circuits with moderate voltage requirements.
  • Drain Current (Id): Capable of conducting up to 200mA of continuous current, this MOSFET is perfect for low to medium current switching tasks.

Applications

  1. Switching Circuits: The 2N7000: N-Channel Enhancement-Mode Field-Effect Transistor is widely used in low-power switching circuits, where it can control the flow of current to different parts of a circuit with minimal power loss.
  2. Signal Amplification: Due to its ability to handle small signals with precision, this MOSFET is often employed in signal amplification circuits in audio and RF applications.
  3. Load Drivers: The 2N7000 can drive small loads, such as LEDs, relays, and other low-power components, making it a versatile choice in various control circuits.
  4. DC-DC Converters: In power management circuits, the 2N7000 is used in the switching stages of DC-DC converters, contributing to the efficient conversion of power.
  5. Relay Replacement: This MOSFET can be used to replace mechanical relays in some applications, offering faster switching times and increased reliability.
  6. Logic-Level Conversion: It is often used in circuits where voltage levels need to be shifted between different logic families, ensuring compatibility between components.
  7. Battery-Powered Devices: The low gate threshold voltage and low power consumption make the 2N7000 ideal for battery-operated devices, extending battery life.
  8. Analog and Digital Circuits: The 2N7000 is suitable for use in both analog and digital circuits, providing flexibility in circuit design.

Advantages

  • Fast Switching Speed: The 2N7000’s fast switching capabilities make it ideal for applications requiring quick response times, such as in pulse circuits.
  • Energy Efficiency: With low on-resistance and minimal power dissipation, this MOSFET helps maintain energy efficiency in your circuits, especially in battery-powered applications.
  • Compact Size: The 2N7000 is available in a small TO-92 package, making it easy to integrate into compact circuits and PCBs.
  • Ease of Use: Its enhancement-mode operation means it remains off without a gate voltage, simplifying the design of control circuits.
  • Low Gate Drive Requirement: The 2N7000 can be easily driven by standard logic levels, making it compatible with microcontrollers and other digital devices.

Conclusion The 2N7000: N-Channel Enhancement-Mode Field-Effect Transistor N-channel enhancement-mode MOSFET is a highly versatile and efficient transistor suitable for a wide range of electronic applications. Whether you’re working on switching circuits, load drivers, or signal amplification, the 2N7000 offers reliable performance with low power consumption. Its compact size, ease of use, and compatibility with both analog and digital circuits make it a go-to choice for hobbyists and engineers alike. If your project demands efficient switching and control with minimal energy loss, the 2N7000 is an excellent component to consider.

IRFP250 N-channel MOSFET

Sold By : Computronics Lab SKU: 2n7000 Category: Tags: ,

Based on 0 reviews

0.0 overall
0
0
0
0
0

Be the first to review “2N7000: N-Channel Enhancement-Mode Field-Effect Transistor (MOSFET) (Pack of 5)”

There are no reviews yet.